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SUD50NP04-77P
Vishay Siliconix
Complementary N- and P-Channel 40-V (D-S) MOSFET
PRODUCT SUMMARY
V DS (V) r DS(on) ( Ω )
0.037 at V GS = 10 V
N-Channel 40
0.046 at V GS = 4.5 V
I D (A) a Q g (Typ.)
8
26
8
FEATURES
? TrenchFET ? Power MOSFET
? 100 % UIS Tested
APPLICATIONS
RoHS
COMPLIANT
P-Channel
- 40
0.040 at V GS = - 10 V
0.050 at V GS = - 4.5 V
-8
-8
25.5
? Backlight Inverter for LCD Display
? Full Bridge DC/DC Converter
TO-252-4L
D-PAK
D
D
Top V ie w
Drain Connected to
Ta b
G 1
G 2
S 1 G 1
S 2 G 2
S 1
S 2
Orderin g Information: SUD50 N P04-77P-T4-E3 (Lead (P b )-free)
N -Channel MOSFET
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS T A = 25 °C, unless otherwise noted
Parameter
Symbol
N-Channel
P-Channel
Unit
Drain-Source Voltage
Gate-Source Voltage
V DS
V GS
40
± 20
- 40
V
T C = 25 °C
8 a
- 8 a
8
Continuous Drain Current (T J = 150 °C)
T C = 70 °C
T A = 25 °C
I D
8
a
a, b, c
- 8 a
- 8 a, b, c
T A = 70 °C
7
b, c
- 7.4 b, c
Pulsed Drain Current (10 μs Pulse Width)
I DM
30
- 30
A
Source-Drain Current Diode Current
Pulsed Source-Drain Current
T C = 25 °C
T A = 25 °C
I S
I SM
8 a
4.3 b, c
30
- 8 a
- 4.6 b, c
- 30
Single Pulse Avalanche Current
Single Pulse Avalanche Energy
L = 0.1 mH
I AS
E AS
7
2.45
15
11.25
mJ
T C = 25 °C
10.8
24
Maximum Power Dissipation
T C = 70 °C
T A = 25 °C
P D
6.9
5.2 b, c
15.3
5.6 b, c
W
T A = 70 °C
3.3 b, c
3.6 b, c
Operating Junction and Storage Temperature Range
T J , T stg
- 55 to 150
°C
THERMAL RESISTANCE RATINGS
N-Channel
P-Channel
Parameter
Symbol
Typ.
Max.
Typ.
Max.
Unit
Maximum Junction-to-Ambient b, d
Maximum Junction-to-Case (Drain)
t ≤ 10 s
Steady State
R thJA
R thJC
20
9.4
24
11.5
18
4.3
22
5.2
°C/W
Notes:
a. Package Limited.
b. Surface Mounted on 1" x 1" FR4 Board.
c. t = 10 s.
d. Maximum under Steady State conditions is 60 °C/W (N-Channel) and 52 °C/W (P-Channel).
Document Number: 73989
S-80109-Rev. B, 21-Jan-08
www.vishay.com
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